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Principles of Magnetoresistive Elements

Magnetic Sensor Elements

Principal Characteristics of Magnetic Sensor Elements

Murata magnetic sensors use magnetoresistive elements made of n-InSb (compound semiconductor of the III-V group).

Element Characteristics
Semiconductor magnetoresistive element (InSb)
  • Wide dynamic range (detectable from static sate to MHz order)
  • Wide gap characteristic
  • High output
  • Output will not be saturated even at high magnetic flux density.
  • Excellent environmental resistance
  • Temperature characteristics are provided.
  • Output sin wave distortion factor is low. -> High multiplication output is enabled.
  • Polarity differentiation is disabled.
Hall element
  • Wide dynamic range
  • Low output -> Used for Hall ICs
  • Polarity differentiation is enabled.
  • Magnetic flux density/output characteristic is linear.
Ferromagnetic thin film element
  • Product sensitivity is high. Suitable for detection of feeble magnetic fields.
  • Magnetic flux horizontal to element surface is detected.
  • Temperature characteristics are relatively excellent.
  • Output will be saturated depending on magnetic flux density.
  • Hysteresis is provided for magnetic flux density.
  • Gap characteristic is poor.
Coil pickup
  • High output
  • High resolution
  • Temperature characteristics are excellent.
  • Output depends on speed. Detection of 20-Hz or lower frequency is difficult.
  • It must be used in contact with the target material, because of its poor gap characteristic.

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Operating Ranges and Application Fields of Magnetic Sensors

Operating Ranges and Application Fields of Magnetic Sensors

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Principles of Magnetoresistive Elements

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