Silicon CapacitorsWLSC Series

Wire-bondable vertical low profile capacitor down to 100μm

The WLSC (100μm thick) capacitors target RF High Power applications for wireless communication (e.g: 5G), radar and data broadcasting systems. The WLSC capacitors are suitable for DC decoupling, matching network, and harmonic / noise filtering functions. The unique technology of integrated passive devices in silicon developed by Murata*, can solve most of the problems encountered in demanding applications. These Si capacitors in ultra–deep trenches have been developed with a semiconductor process which enables the integration of high capacitance density from 6nF/mm2 to 250nF/mm2 (with a breakdown voltage of respectively 150V to 11V). Our SiCap technology features high reliability - up to 10times better than alternative capacitors technologies - thanks to a full control of the production process with high temperature curing (above 900°C) generating a highly pure oxide. This technology provides industry-leading performance particularly in terms of capacitor stability over the full operating DC voltage & temperature range. In addition, intrinsic properties of the silicon show a low dielectric absorption and a low to zero piezo electric effect resulting in no memory effect. This Silicon based technology is ROHS compliant.

*Murata Integrated Passive Solutions

Key features

  • Ultra low profile 100µm.
  • Low leakage current.
  • High stability (temperature and voltage).
  • Negligible capacitance loss through aging.
  • Compatible with standard wire bonding assembly (ball and wedge).

(please refer to our assembly note for more details)

Key applications

  • Any demanding applications such as radar, wireless infrastructure communication, data broadcasting…
  • Standard wire bonding approach (top & bottom gold metallization), easier than MLCC, thanks to a perfect pad flatness.
  • Decoupling / DC noise and harmonic filtering / Matching networks (e.g: GaN power amplifier, LDMOS).
  • High reliability applications.
  • Downsizing. Low profile applications (100μm).
  • Fully compatible with single layer ceramic capacitors and Metal Oxide Semiconductor.

WLSC series Specification

Parameter Value
Capacitance range 47pF to 22nF(*)
Capacitance tolerances ±15%(*)
Mounting Method Wire-bonding vertical(*4)
Operating temperature range -55°C to 150°C
Storage temperature range -70°C to 165°C(*2)
Temperature coefficient +60ppm/K
Breakdown Voltage (BV) 11V, 30V, 50V, 150V(*)(*5)
Capacitance variation versus 0.02%/V (from 0 to RVDC)
Equivalent Series Inductor (ESL) Typ 50pH @ SRF (*3)
Equivalent Series Resistor (ESR) Max 50mΩ (*3)
Insulation resistance 10GΩ @ RVDC @ 25°C t>120s for 10nF
Aging Negligible, < 0.001% / 1000h
Capacitor height 100µm(*)
  • (*) Other values on request (*2)w/o packing
  • (*3) with wire-bonding de-embedded
  • (*4)Please check the assembly note for the mounting methods of each product.
  • (*5)See the FAQ here for the relationship between breakdown voltage and rated voltage.

WLSC Series

Refer to this FAQ regarding the relationship between voltage tolerance and rated voltage.
See the FAQ here for the part numbering.

Assembly Note

Assembly Note Silicon Capacitor_Assembly by wirebond (PDF: 2.0 MB)

UPDATE
12/1/2023