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    4. Silicon Capacitors
    5. Integrated Passive Devices
    6. Performance of Silicon components
    Silicon Capacitors

    Silicon CapacitorsPerformance of Silicon components

    Why use Silicon Passive in your design?

    Murata PICS shows superior performance against alternative technologies

    • At the component level
      • Complete design rules available
      • Custom design made possible
      • Against Frequency
      • Against Temperature
      • Against Operating Voltage
    • At the system level
      • High integration capabilities
      • High predictability thanks to simulation models
      • High repeatability thanks to IC manufacturing Excellence

    SILICON PASSIVES: BETTER PERFORMANCE WITH COMPLETE DESIGN RULES

    • Comparison between typical design rules of LTCC, Laminate and Silicon passive (PICS) based circuits
    Swipe left or right to change screens View in landscape mode.
    Design Rules
    (all dimensions are given in µm)    		 LTCC Laminate PICS
    Min. line width 50 65 3
    Min. line space 50 65 5
    • Increased routing density leads to higher performance

    SILICON PASSIVES: BETTER PERFORMANCE FOR PLATFORM INTEGRATION

    • Exact component value from simulation can be used, no compromises on performance
    • Performance stability over temperature range, thanks to +/-30 ppm variation per °C (COG performances)
    Swipe left or right to change screens View in landscape mode.
    Design advantage LTCC Laminate PICS
    Simulation accuracy Medium Low High
    Temperature stability Yes, with COG capacitor Yes with COG capacitor Yes, without cost penalty
    1 % Component Matching Yes, with cost penalties Yes, with cost penalties Yes, without cost penalty
    High Routing density No Very low Yes

    3D SILICON PASSIVE DEVICES OUT OF STANDARD PERFORMANCE

    Capacitors
    • Superior temperature stability (<20 ppm)
      >>Technology characterized to +200 °C
    • Very low leakage current (<40 nA)
    • Superior DC voltage stability (<0.1 %/V)
      >>No capacitance change over voltage variation.
    • Very low ESR < 40 mOhm
    Zener Diodes
    • Breakdown voltage up to 100 Volts and ESD Capability 15 kV Air discharge
      (IEC 6100-4-2, level 4)
    Resistors
    • Excellent matching (better than 0.5 %)
    Coils
    • Superior Q-factor (> 80)
    • Self-res. freq. > 45GHz

    3D SILICON PASSIVE TECHNOLOGY ALLOWS COMPLETE INTEGRATION OF:

    • excellent RF filtering
    • full RF-digital cross-talk cancellation
    • excellent DC decoupling filtering

    EXAMPLE: IMPROVING PERFORMANCE IN MIXED RF+ DIGITAL APPLICATIONS

    • Dual TV tuner
      - Thanks to the combination of high decoupling efficiency with optimal performance RF components, noise behavior is reduced considerably compared with designs with SMDs on laminate

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    1. Electronic Components
    2. Capacitor
    3. Silicon Capacitors
    4. Integrated Passive Devices
    1. HOME
    2. Electronic Components
    3. Capacitor
    4. Silicon Capacitors
    5. Integrated Passive Devices
    6. Performance of Silicon components
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