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    4. Thin Film Circuit Substrates (RUSUB)

    Thin Film Circuit Substrates (RUSUB)

    Features
    1. High Q value and high dielectric constant material enables low insertion loss and miniaturization of the device.
    2. A wide selection of substrate materials meets customer's requirements.
    3. Metallization process suitable for each substrate material achieves excellent reliability.
    4. By utilizing gold electrodes, die bonding with AuSn and wire bonding with gold wire are possible.
    5. Thin film microfabrication technology allows precise micro pattern.
    6. AuSn pre-coating is available.
    7. CR composite products are also available by combining high dielectric capacitor and thin film resistor.
    Design Examples
    Thin Film Circuit Substrates (RUSUB)

    Applications

    RF Power Amplifier, Optical Communication Devices, etc.

    Technical Note

    Substrate Characteristics and General Specifications

    Please refer to the table 1 for general specifications by substrate materials.

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    Table 1. Substrate Characteristics and General Specifications
    Function Substrate Material Code Dielectric
    Constant
    (εr)*1    		 Size min.
    （L×W）
    (mm)
    *2    		 Thickness
    (mm)    		 Capacity
    Temperature
    Characteristics
    (ppm/°C)
    *3    		 TaN
    Resistance    		 L/S min.
    (µm)
    *4    		 Coefficient of
    Thermal
    Expansion
    (ppm/°C)
    *1    		 Temperature
    Conductivity
    (ppm/(m∙°C))*1
    Impedance
    Matching    		 A 10 0.25×0.25 0.20,0.25,0.38,0.50,0.64 ― ○ 30/30
    (Au thickness:4µm)

    50/50
    (Au thickness:8µm)    		 7.0 33.5
    H 39 0.25×0.25 0.10~0.64 0±30 ○ 6.6 1.9
    K 90 0.25×0.25 0.10~0.64 -330±120 ○ 9.2 2.3
    R 125 0.25×0.25 0.10~0.64 -750±600 ○ 9.6 3.1
    U 150 0.25×0.25 0.10~0.64 -750±120 ○ 11.7 2.0
    F 250 0.25×0.25 0.10~0.64 -750±600 ○ 12.2 4.0
    Decoupling Y 3000 0.25×0.25 0.10~0.64 ±10% ○ 10.7 2.5
    • *1Typical value
    • *2L=length, W=width
    • *3Temperature Range: -25~85°C, Reference Temperature: 25°C
    • *4L=line, S=space

    Please refer to the following links for lineup by application.

    Resistor Specifications

    Three types of sheet resistance are available.
    Please refer to the table 2 below.

    Table 2. Resistor Specifications
    Material TaN
    Sheet Resistance [Ω] 12.5, 25, 50
    Operating Temperature Range [°C] -55 to 125
    Rated Voltage [mW/mm2] 100
    Resistance Tolerance [%] ±20
    Resistance Temperature Coefficient [ppm/°C] -70±50

    AuSn Pre-coating

    The specifications of AuSn pre-coating are shown in the table 3 and the figure 2 below.

    Table 3. AuSn Pre-coating Specifications
    1.AuSn Pre-coating Thickness 5±2µm, 10±3µm, 15±4µm
    2.Coating Size Min 150×150µm±10µm (5µm Thickness)
    Min 150×150µm±20µm (10, 15µm Thickness)
    3.AuSn Electrode Offset
    (Top Side)    		 ≥25µm
    4.AuSn Electrode Offset
    (Bottom Side)    		 ≥50µm

    Au Electrode

    The table 4 shows Au electrode specifications. Dimension tolerance varies depending on thickness.

    Table 4. Au Electrode Specifications
    Thickness 4µm 8µm
    Dimension Tolerance ±10µm ±15µm
    Offset 50µm (from chip edge)

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