Murata high-density silicon capacitors have been developed with a semiconductor MOS process and are using 3D structures to substantially increase the electrode surfaces, and therefore increase the capacitance for a given footprint.
Murata silicon technology is based on a monolithic structure embedded in a noncrystalline substrate (single MIM and multi-MIM – Metal Insulator Metal).
Higher performance in a smaller package
This advanced 3D topology gives a developed active capacitance area equivalent to 80 ceramic layers in an amazing 100 µm thickness (lower values available on request). Thanks to a very linear and low dispersive dielectric, miniaturization, capacitance value and electrical performances are optimized.
10 times reliability of MLCC capacitors technologies
Coming from the same DNA as the semiconductor MOS process, Murata silicon capacitors have a default mode fully modelized with proven consistent data and offer therefore predictable and exceptional reliable performances. Our silicon capacitors technology features up to 10 times higher reliability than alternative capacitors technologies, mainly obtained thanks to the oxide generated during the high temperature curing. Furthermore, all electrical tests are completed at the end of the production steps which avoids early failures.