Thin Film Circuit Substrates (RUSUB)

Features
  1. High Q value and high dielectric constant material enables low insertion loss and miniaturization of the device.
  2. A wide selection of substrate materials meets customer's requirements.
  3. Metallization process suitable for each substrate material achieves excellent reliability.
  4. By utilizing gold electrodes, die bonding with AuSn and wire bonding with gold wire are possible.
  5. Thin film microfabrication technology allows precise micro pattern.
  6. Through hole via and AuSn pre-coating are available.
  7. CR composite products are also available by combining high dielectric capacitor and thin film resistor.
Design Examples

Applications

RF Power Amplifier, Optical Communication Devices, etc.

Technical Note

Substrate Characteristics and General Specifications

Please refer to the table 1 for general specifications by substrate materials.

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Table 1. Substrate Characteristics and General Specifications
Function Dielectric
Constant
(εr)*1
Size min.
(L×W×T)
(mm)
*2
Capacity
Temperature
Characteristics
(ppm/°C)
*3
Through
Hole
TaN
Resistance
L/S min.
(µm)
*4
Coefficient of
Thermal
Expansion
(ppm/°C)
*1
Temperature
Conductivity
(ppm/(m∙°C))*1
Impedance
Matching
9 0.25×0.25×0.09 30/30
(Au thickness:4µm)

50/50
(Au thickness:8µm)
4.6 200.0
10 0.25×0.25×0.20 7.0 33.5
39 0.25×0.25×0.09 0±30 × 6.6 1.9
90 0.25×0.25×0.09 -330±120 × 9.2 2.3
150 0.25×0.25×0.09 -750±120 × 11.7 2.0
250 0.25×0.25×0.09 -750±600 × 12.2 4.0
Decoupling 3000 0.25×0.25×0.09 ±10% × 10.7 2.5
10000 0.25×0.25×0.09 +30,-80% × × 10.5 1.6
15000 0.25×0.25×0.09 +30,-90% × × 14.0 2.4
30000 0.25×0.25×0.25 ±25% × 11.2 7.35
  • *1Typical value
  • *2L=length, W=width, T=thickness
  • *3Temperature Range: -25~85°C, Reference Temperature: 25°C
  • *4L=line, S=space

Please refer to the following links for lineup by application.

Resistor Specifications

Three types of sheet resistance are available.
Please refer to the table 2 below.

Table 2. Resistor Specifications
Material TaN
Sheet Resistance [Ω] 12.5, 25, 50
Operating Temperature Range [°C] -55 to 125
Rated Voltage [mW/mm2] 100
Resistance Tolerance [%]* ±20
Resistance Temperature Coefficient [ppm/°C] -70±50
  • *Please contact us for smaller resistor tolerance.

Through Hole Via Specifications

Design rule is shown in the table 3 and the figure 1 below.

Table 3. Through Hole Via Specifications
a:Hole to Hole [mm] 0.22 min.
b:Distance between Hole and Electrode [mm] 0.10 min.
c:Distance between Electrode and Chip Edge [mm] 0.15 min.

AuSn Pre-coating

The specifications of AuSn pre-coating are shown in the table 4 and the figure 2 below.

Table 4. AuSn Pre-coating Specifications
1.AuSn Pre-coating Thickness 5±2µm, 10±3µm, 15±4µm
2.Coating Size Min 150×150µm±10µm (5µm Thickness)
Min 150×150µm±20µm (10, 15µm Thickness)
3.AuSn Electrode Offset
(Top Side)
≥25µm
4.AuSn Electrode Offset
(Bottom Side)
≥50µm

Au Electrode

The table 5 shows Au electrode specifications. Dimension tolerance varies depending on thickness.

Table 5. Au Electrode Specifications
Thickness* 4µm 8µm
Dimension Tolerance ±10µm ±15µm
Offset 50µm (from chip edge)
  • *15µm thickness is also available upon request.

PDF Catalog

Please find our product catalog here.

Thin Film Circuit Substrates RUSUB (PDF: 2.2 MB)

CAT NO.
C01-10
UP DATE
02/07/2019