Application for Base Station RFPA | Silicon Capacitors

Signal-frequency broadband expansion and issues associated with high-speed large capacity communications

An expansion high-speed large capacity communications is being considered to enable communications speed of 10 Gbps, which is 100 times the current speed. However, it is known that when a broadband signal is output at a high power, an Inter Modulation Distortion (IMD) is generated in the Power Amplifier Module (PAM), reducing signal integrity. IMD frequency is a proportional function of the bandwidth, and the affected frequencies in Second-Order IMD are up to 400 MHz with Sub 6 GHz or several GHz with mmWave.

Target application: RFPA Module for Base Station

Reducing IMD Noise with Silicon Capacitors
Feature of Si-Cap
Standard Product Lineup
Si-IPD solution
FAQ
Related Links

Assembly notes

Reducing IMD Noise with Silicon Capacitors

Solutions by silicon capacitor

Second-order IMD noise is removed by placing a capacitor on the bias line of the FET and then using the capacitor's function as a filter. However, it is difficult with a normal design to remove IMD noise in the high-frequency range due to the equivalent series inductance (ESL) components of the substrates, microstrip lines, and other parts.
Silicon capacitors can be mounted close to the FET with wire bonding. This makes it possible to greatly suppress the excess ESL components, which supports the removal of IMD noise in the range of hundreds of MHz.
In addition, Murata's silicon capacitors can be used stably even in high-temperature environments because they are made with temperature-compensating materials while having a small size and large capacity thanks to our original technology.

Feature of Si-Cap

Realizing a small size and high capacitance in actual usage conditions (high temperature environment with applied voltage)

Thanks to our original 3D structure technology providing 100 times more electrode surface area than with a planar structure, and enabling a small size and high capacitance. In addition, a temperature compensating material is used as the dielectric of the Si-Cap, maintaining capacitance even in actual usage conditions, enabling a maximum capacitance density in small and vertical capacitors.

Silicon Capacitor Generalities

Standard Product Lineup

Wire bondable series

- New Lineup
WLSC series

Frequency : 10GHz
Thickness : 100µm
WBSC series

Frequency : 10GHz
Thickness : 250µm
UWSC series

Frequency : 26GHz
Thickness : 100/250µm

Assembly notes

Si-IPD solution

Integrate the capacitor and resistor into one chip!

We are also proposing an IPD that integrates into one chip the damping resistor to suppress anti-resonance with other capacitors that have different capacities for capacitors for RF power amplifiers. *Currently under development.
Please contact us using the contact form if you would like to know more details.

Inquiries about custom designs

Please contact us if you require customization.

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Related terms: VBW Circuit, Ultra Wide Bandwidth (UWB), 5G, 4G, 3G, High Power, Final Stage, SiliconCapacitor(Si-Cap), SiliconIPD(Si-IPD, Integrated Passive Device)

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Silicon CapacitorsApplication for Base Station RFPA