Silicon CapacitorsWLSC Series

Wire-bondable vertical low profile capacitor down to 100μm

The WLSC (100μm thick) capacitors target RF High Power applications for wireless communication (e.g: 5G), radar and data broadcasting systems. The WLSC capacitors are suitable for DC decoupling, matching network, and harmonic / noise filtering functions. The unique technology of integrated passive devices in silicon developed by Murata*, can solve most of the problems encountered in demanding applications. These Si capacitors in ultra–deep trenches have been developed with a semiconductor process which enables the integration of high capacitance density from 6nF/mm2 to 250nF/mm2 (with a breakdown voltage of respectively 150V to 11V). Our SiCap technology features high reliability - up to 10times better than alternative capacitors technologies - thanks to a full control of the production process with high temperature curing (above 900°C) generating a highly pure oxide. This technology provides industry-leading performance particularly in terms of capacitor stability over the full operating DC voltage & temperature range. In addition, intrinsic properties of the silicon show a low dielectric absorption and a low to zero piezo electric effect resulting in no memory effect. This Silicon based technology is ROHS compliant.

*Murata Integrated Passive Solutions

Go here to confirm assembly notes for each product.

Key features

  • Ultra low profile 100µm.
  • Low leakage current.
  • High stability (temperature and voltage).
  • Negligible capacitance loss through aging.
  • Compatible with standard wire bonding assembly (ball and wedge).

(please refer to our assembly note for more details)

Key applications

  • Any demanding applications such as radar, wireless infrastructure communication, data broadcasting…
  • Standard wire bonding approach (top & bottom gold metallization), easier than MLCC, thanks to a perfect pad flatness.
  • Decoupling / DC noise and harmonic filtering / Matching networks (e.g: GaN power amplifier, LDMOS).
  • High reliability applications.
  • Downsizing. Low profile applications (100μm).
  • Fully compatible with single layer ceramic capacitors and Metal Oxide Semiconductor.

WLSC series Specification

Parameter Value
Capacitance range 47pF to 22nF(*)
Capacitance tolerances ±15%(*)
Mounting Method Wire-bonding vertical(*4)
Operating temperature range -55°C to 150°C
Storage temperature range -70°C to 165°C(*2)
Temperature coefficient +60ppm/K
Breakdown Voltage (BV) 11V, 30V, 50V, 150V(*)
Capacitance variation versus 0.02%/V (from 0 to RVDC)
Equivalent Series Inductor (ESL) Typ 50pH @ SRF (*3)
Equivalent Series Resistor (ESR) Max 50mΩ (*3)
Insulation resistance 10GΩ @ RVDC @ 25℃ t>120s for 10nF
Aging Negligible, < 0.001% / 1000h
Reliability FIT<0.017 parts / billions hours
Capacitor height 100µm(*)
  • (*) Other values on request (*2)w/o packing
  • (*3) with wire-bonding de-embedded
  • (*4)Please check the assembly note for the mounting methods of each product.

WLSC Series

Assembly Note

Assembly Note WBSC / WTSC / WXSC / WLSC_V1.7_Murata (PDF: 0.7 MB)


PDF Catalog

PDF documents related to silicon capacitors can be downloaded below

Commercial leaflet WLSC V2.4_Murata (PDF: 1.3 MB)