Thin Film Circuit Substrates (RUSUB)

■Features

  • High Q value and high dielectric constant material enables low insertion loss and miniaturization of the device.
  • A wide selection of substrate materials meets customer's requirements.
  • Metallization process suitable for each substrate material achieves excellent reliability.
  • By utilizing gold electrodes, die bonding with AuSn and wire bonding with gold wire are possible.
  • Thin film microfabrication technology allows precise micro pattern.
  • Through hole via and AuSn pre-coating are available.
  • CR composite products are also available by combining high dielectric capacitor and thin film resistor.

Design Examples



Murata Icon X Applications

RF Power Amplifier, Optical Communication Devices, etc.

Murata Icon X Technical Note

Substrate Characteristics and General Specifications

Please refer to the table 1 for general specifications by substrate materials.


Table 1. Substrate Characteristics and General Specifications

Function Dielectric
Constant
(εr)*1
Size min.
(L×W×T)
(mm)
*2
Capacity
Temperature
Characteristics
(ppm/°C)
*3
Through
Hole
TaN
Resistance
L/S min.
(µm)
*4
Coefficient of
Thermal
Expansion
(ppm/°C)
*1
Temperature
Conductivity
(ppm/(m∙°C))*1
Impedance
Matching
9 0.25×0.25×0.09 30/30
(Au thickness:4µm)

50/50
(Au thickness:8µm)
4.6 200.0
10 0.25×0.25×0.20 7.0 33.5
39 0.25×0.25×0.09 0±30 × 6.6 1.9
90 0.25×0.25×0.09 -330±120 × 9.2 2.3
150 0.25×0.25×0.09 -750±120 × 11.7 2.0
250 0.25×0.25×0.09 -750±600 × 12.2 4.0
Decoupling 3000 0.25×0.25×0.09 ±10% × 10.7 2.5
10000 0.25×0.25×0.09 +30,-80% × × 10.5 1.6
15000 0.25×0.25×0.09 +30,-90% × × 14.0 2.4
30000 0.25×0.25×0.25 ±25% × 11.2 7.35
  • *1 : Typical value
  • *2 : L=length, W=width, T=thickness
  • *3 : Temperature Range: -25~85°C, Reference Temperature: 25°C
  • *4 : L=line, S=space

■ Please refer to the following links for lineup by application.



Resistor Specifications

Three types of sheet resistance are available.
Please refer to the table 2 below.


Table 2. Resistor Specifications

Material TaN
Sheet Resistance [Ω] 12.5, 25, 50
Operating Temperature Range [°C] -55 to 125
Rated Voltage [mW/mm2] 100
Resistance Tolerance [%]* ±20
Resistance Temperature Coefficient [ppm/°C] -70±50

* Please contact us for smaller resistor tolerance.



Through Hole Via Specifications

Design rule is shown in the table 3 and the figure 1 below.


Table 3. Through Hole Via Specifications

a:Hole to Hole [mm] 0.22 min.
b:Distance between Hole and Electrode [mm] 0.10 min.
c:Distance between Electrode and Chip Edge [mm] 0.15 min.

AuSn Pre-coating

The specifications of AuSn pre-coating are shown in the table 4 and the figure 2 below.


Table 4. AuSn Pre-coating Specifications

1.AuSn Pre-coating Thickness 5±2µm, 10±3µm, 15±4µm
2.Coating Size Min 150×150µm±10µm (5µm Thickness)
Min 150×150µm±20µm (10, 15µm Thickness)
3.AuSn Electrode Offset
(Top Side)
≥25µm
4.AuSn Electrode Offset
(Bottom Side)
≥50µm

Au Electrode

The table 5 shows Au electrode specifications.
Dimension tolerance varies depending on thickness. 


Table 5. Au Electrode Specifications

Thickness* 4µm 8µm
Dimension Tolerance ±10µm ±15µm
Offset 50µm (from chip edge)

* 15µm thickness is also available upon request.

Murata Icon X PDF Catalog

Please find our product catalog here.

Thin Film Circuit Substrates RUSUB (PDF: 2.2 MB)

  • CAT NO. C01-10
  • UPDATE 2/7/2019
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