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Inductor for Power LinesQualcomm Snapdragon™ Reference Design
Power Inductor DFE2MCPH Series

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  • Logo of Murata

Murata is pleased to announce that our innovative power inductor solution has been referenced in Qualcomm's latest high-performance ADAS/IVI platform, the Automotive Snapdragon™.

Qualcomm Snapdragon Website

Referenced IC

Qualcomm SoC
SA8295P
SA8795P
SA8540P
SA8530P
SA8775P
SA8650P
SA8255P
SA8630P
SA7255P
Qualcomm PMIC
PMM8295AU
PMM8540AU
PMM8650AU
PMM8620AU
PMAU0101

Automotive ECU Structure

Murata's power inductor, the "DFE2MCPH," has been selected by Qualcomm for use in their power circuit reference design.

Image of power circuit reference design

DFE2MCPH series (0806 inch size)

Appearance & Features

Features

  • Compliant with AEC-Q200
  • IATF16949 certified
  • Low DCR and High current
  • Operating Temp Range: −40 to +155°C (including self heating)
  • Size: 0806 (2.0 × 1.6mm / Height: 1.2mm Max.)
  • L Shape Termination
Appearance of DFE2MCPH series

Specification

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P/N L [uH] Rdc [mΩ] Isat [A]*1 Itemp [A]*2 Details
Max. (Typ.) Max. (Typ.) Max. (Typ.)
DFE2MCPHR33MJLLQ 0.33 18 (14) 6.9 (8.1) 5.1 (6.4)
DFE2MCPHR47MJLLQ 0.47 22 (19) 5.4 (6.3) 4.4 (5.5)
  • *1Isat: The saturation current value is specified when the decrease of the nominal inductance value at 30%.
  • *2Itemp: The current at which a coil temperature to rise by 40°C.

Electrical characteristics

  • Current saturation characteristic of New DFE2MCPH improved 60% compared with the current product.
  • Inductor Loss of New DFE2MCPH improved 24%@1A and 38%@5A compared with the current product.
Inductance - DC bias data (0.33uH)
Inductor Loss (0.33uH)