Thin Film Circuit Substrates (RUSUB)

Features: High Q value and high dielectric constant material enables low insertion loss and miniaturization of the device.

A wide selection of substrate materials meets customer's requirements.

Metallization process suitable for each substrate material achieves excellent reliability.

By utilizing gold electrodes, die bonding with AuSn and wire bonding with gold wire are possible.

Thin film microfabrication technology allows precise micro pattern.

CR composite products are also available by combining high dielectric capacitor and thin film resistor.

Applications

Please refer to the table 1 for general specifications by substrate materials.

Table 1. Substrate Characteristics and General Specifications
Function	Substrate Material Code	Dielectric Constant (εr)*1	Size min. （L×W） (mm) *2	Thickness (mm)	Capacity Temperature Characteristics (ppm/°C) *3	TaN Resistance	L/S min. (µm) *4	Coefficient of Thermal Expansion (ppm/°C) *1	Temperature Conductivity (W/(m∙°C))*1
Impedance Matching	A	10	0.25×0.25	0.20,0.25,0.38,0.50,0.64	―	○	30/30 (Au thickness:4µm) 50/50 (Au thickness:8µm)	7.0	33.5
	H	39	0.25×0.25	0.10~0.64	0±30	○		6.6	1.9
	K	90	0.25×0.25	0.10~0.64	-330±120	○		9.2	2.3
	R	125	0.25×0.25	0.10~0.64	-750±600	○		9.6	3.1
	U	150	0.25×0.25	0.10~0.64	-750±120	○		11.7	2.0
	F	250	0.25×0.25	0.10~0.64	-750±600	○		12.2	4.0
Decoupling	Y	3000	0.25×0.25	0.10~0.64	±10%	○		10.7	2.5

Please refer to the following links for lineup by application.

Three types of sheet resistance are available.
Please refer to the table 2 below.

Table 2. Resistor Specifications
Material	TaN
Sheet Resistance [Ω]	12.5, 25, 50
Operating Temperature Range [°C]	-55 to 125
Rated Voltage [mW/mm²]	100
Resistance Tolerance [%]	±20
Resistance Temperature Coefficient [ppm/°C]	-70±50

The table 3 shows Au electrode specifications. Dimension tolerance varies depending on thickness.